型号:

BSF024N03LT3 G

RoHS:无铅 / 符合
制造商:Infineon Technologies描述:MOSFET N-CH 30V 106A 2WDSON
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
BSF024N03LT3 G PDF
标准包装 1
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 106A
开态Rds(最大)@ Id, Vgs @ 25° C 2.4 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大) 2.2V @ 250µA
闸电荷(Qg) @ Vgs 71nC @ 10V
输入电容 (Ciss) @ Vds 5500pF @ 15V
功率 - 最大 2.2W
安装类型 表面贴装
封装/外壳 3-WDSON
供应商设备封装 MG-WDSON-2,CanPAK M?
包装 剪切带 (CT)
其它名称 BSF024N03LT3 GCT
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